US Patent Issued to MURATA MANUFACTURING on Aug. 25 for "Resonance device with anti-diffusion layer and resonance device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,443, issued on Aug. 25, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan).

"Resonance device with anti-diffusion layer and resonance device manufacturing method" was invented by Yoshiyuki Higuchi (Nagaokakyo, Japan) and Masakazu Fukumitsu (Nagaokakyo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resonance device that includes a MEMS substrate, a top cover, and a bonding part. The MEMS substrate includes a resonator. The bonding part is electrically conductive and bonds the MEMS substrate and the top cover to each other. The MEMS substrate further includes a wiring line layer and an anti-diffusion layer. The wiring line laye...