ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,893, issued on April 7, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan).

"Semiconductor integrated circuit and radio-frequency module" was invented by Hiroshi Nishikawa (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor IC includes a first radio-frequency element (e.g., an inductor in a low-noise amplifier), a second radio-frequency element (e.g., an inductor in a low-noise amplifier), a first via conductor (e.g., a via conductor that is placed between the first radio-frequency element and the second radio-frequency element and that is connected to a ground potential."

The patent was filed on Feb. 8, 2023, und...