US Patent Issued to MSSCORPS, National Chung Hsing University on May 26 for "Method for obtaining the equivalent oxide thickness of a dielectric layer" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,638,472, issued on May 26, was assigned to MSSCORPS Co. LTD. (Hsinchu City, Taiwan) and National Chung Hsing University (Taichung City, Taiwan).

"Method for obtaining the equivalent oxide thickness of a dielectric layer" was invented by Mao-Nan Chang (Taichung City, Taiwan), Chi-Lun Liu (Hsinchu City, Taiwan), Hsueh-Liang Chou (Hsinchu City, Taiwan), Yi-Shan Wu (Taichung City, Taiwan), Chiao-Jung Lin (Hsinchu City, Taiwan) and Yu-Hsun Hsueh (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide...