US Patent Issued to MQSEMI on June 23 for "Semiconductor device" (Swiss Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,673, issued on June 23, was assigned to MQSEMI AG (Zug, Switzerland).

"Semiconductor device" was invented by Munaf Rahimo (Gaensbrunnen, Switzerland) and Iulian Nistor (Niederweningen, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Metal Oxide Semiconductor (MOS) transistor cell design has multiple trench recesses embedding trench gate electrodes longitudinally extending in a third dimension, with interconnected first base layer, source regions, and a second base layer covering portions of the regions between adjacent trench recesses and longitudinally extending in the same third dimension. When a control voltage greater than a thresho...