ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,311, issued on Feb. 17, was assigned to MQ SEMI AG (Zug, Switzerland).
"Semiconductor device" was invented by Munaf Rahimo (Solothurn, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A Metal Oxide Semiconductor (MOS) transistor cell design has a source region and a first base layer extending in a third dimension. When a control voltage greater than a threshold value is applied on the gate trench, electrons flow from a singular point within the source region, into a radial MOS channel formed on the lateral walls of those trench regions surrounded by the first base layer, but not abutting on the higher doped second base layer. The MOS chann...