US Patent Issued to Monolithic Power Systems on June 16 for "Semiconductor device with integrated junction field effect transistor and associated manufacturing method" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,300, issued on June 16, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.).

"Semiconductor device with integrated junction field effect transistor and associated manufacturing method" was invented by Vipindas Pala (San Jose, Calif.) and Sauvik Chowdhury (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes preparing a substrate of a first conductivity type having a drain region, forming a first source region and a second source region of the first conductivity type in the substrate separated from each other, and forming a gate trench of a gate region disposed closely ...