US Patent Issued to Monolithic 3D on May 19 for "Method to produce a 3D multilayer semiconductor device and structure" (American, Israeli Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,163, issued on May 19, was assigned to Monolithic 3D Inc. (Allen, Texas).

"Method to produce a 3D multilayer semiconductor device and structure" was invented by Zvi Or-Bach (Haifa, Israel) and Jin-Woo Han (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of making a 3D multilayer semiconductor device, including: providing a first substrate including a first level, the first level including a first single crystal silicon layer (SCSL); providing a second substrate including a second level, the second level including a second SCSL; performing an epitaxial growth of a SiGe layer on top of the second SCSL; performing an epitaxial gr...