US Patent Issued to Monolithic 3D on June 9 for "Methods for fabricating 3D memory devices and structures with memory arrays and metal layers" (American, Israeli Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,021, issued on June 9, was assigned to Monolithic 3D Inc. (Allen, Texas).

"Methods for fabricating 3D memory devices and structures with memory arrays and metal layers" was invented by Zvi Or-Bach (Haifa, Israel), Jin-Woo Han (San Jose, Calif.) and Brian Cronquist (Klamath Falls, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device comprising: forming a first level; disposing a second level on top of the first level; disposing a third level on top of the second level; forming a via connection through the second level and the third level, where the first level comprises first transistors, at least four in...