US Patent Issued to Monolithic 3D on June 16 for "Methods to process 3D semiconductor devices and structures which have metal layers" (American, Israeli Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,326, issued on June 16, was assigned to Monolithic 3D Inc. (Allen, Texas).

"Methods to process 3D semiconductor devices and structures which have metal layers" was invented by Zvi Or-Bach (Haifa, Israel) and Brian Cronquist (Klamath Falls, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method to process a semiconductor device: processing the substrate forming a first level with a first single-crystal silicon-layer, first transistors, input-and-output ("IO") circuits; forming a first metal-layer; forming a second metal-layer including a power-delivery network, where interconnection of the first transistors includes the first metal-layer and th...