US Patent Issued to Mixed-Signal Devices on Sept. 22 for "High speed full wave rectifier circuits utilizing MOSFET" (California Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,469, issued on Sept. 22, was assigned to Mixed-Signal Devices Inc. (Irvine, Calif.).

"High speed full wave rectifier circuits utilizing MOSFET" was invented by Srikar Bhagavatula (Irvine, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment of the invention, a full wave rectifier circuit includes an LC tank including an inductor and a first capacitor in parallel with a first end connected to supply voltage VDD, first and second transistors with drains connected to a second end of the LC tank, third transistor with source connected to source of the first transistor and to first current source, gate connected to gate of second trans...