US Patent Issued to MITSUMI ELECTRIC on July 14 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,850, issued on July 14, was assigned to MITSUMI ELECTRIC Co. LTD. (Tokyo).

"Silicon carbide semiconductor device" was invented by Shota Sambonsuge (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface; a first electrode formed on the first main surface; and a plating film formed on the first electrode, wherein a first irregularity is formed on a surface of the plating film, and H1/H2 is 0.10 or less, where H1 is a difference between a maximum value of a distance to a top of the first irregularity from the first main surface and a minimum va...