US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor laser device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,963, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor laser device" was invented by Kimio Shigihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device of the present disclosure includes: a first-conductivity-type cladding layer, a first-conductivity-type-side optical guide layer, an active layer, a second-conductivity-type-side optical guide layer, a second-conductivity-type cladding layer, and a second-conductivity-type contact layer laminated above a semiconductor substrate; a resonator having a front end surface and a rear end surface; and a ridge region for guiding a laser beam ...