US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device, power conversion device, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,103, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device, power conversion device, and method of manufacturing semiconductor device" was invented by Yosuke Nakata (Tokyo), Yuji Sato (Tokyo), Kentaro Yoshida (Tokyo) and Kei Hayashi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a technique capable of reducing wiring inductance of a smoothing capacitor. A circuit pattern electrically connected to a semiconductor element is provided on an insulating substrate on a cooler. A smoothing capacitor is disposed not to be overlapped with the semiconductor element in a plan view to include an inner ele...