US Patent Issued to Mitsubishi Electric on Sept. 22 for "High frequency transistor" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,647, issued on Sept. 22, was assigned to Mitsubishi Electric Corp. (Tokyo).

"High frequency transistor" was invented by Shinsuke Watanabe (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Unit transistors are provided on a semiconductor substrate and connected in parallel to one another. Capacitors are respectively connected to gate electrodes of the unit transistors. Resistors are respectively connected to the capacitors in parallel. First and second pads are provided on an upper surface of the semiconductor substrate and respectively connected to one end and the other end of the resistor connected to at least the unit transistor in the center...