US Patent Issued to Mitsubishi Electric on Oct. 20 for "Method for manufacturing semiconductor apparatus and semiconductor manufacturing apparatus comprising amorphous layer between wafer and ring-shaped frame" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,777, issued on Oct. 20, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Method for manufacturing semiconductor apparatus and semiconductor manufacturing apparatus comprising amorphous layer between wafer and ring-shaped frame" was invented by Kyohei Akiyoshi (Tokyo), Yosuke Nakanishi (Tokyo) and Masaru Yamada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the present disclosure, A method for manufacturing a semiconductor apparatus bonds a ring-shaped frame to an outer peripheral portion of a wafer, and comprises the steps of installing one of the wafer and the frame on a stage, holding another of the wafer and the frame in a ...