US Patent Issued to Mitsubishi Electric on Nov. 3 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,828, issued on Nov. 3, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Seiya Kuranaga (Tokyo) and Yukihiro Morishita (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating substrate and a semiconductor element. The insulating substrate includes an insulating layer and a front surface circuit pattern disposed on a surface of the insulating layer. The semiconductor element is bonded to a mount of a surface of the front surface circuit pattern via solder. A groove is provided in a region including a portion of the mount...