US Patent Issued to Mitsubishi Electric on May 12 for "Semiconductor pressure sensor and manufacturing method therefor" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,625,022, issued on May 12, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor pressure sensor and manufacturing method therefor" was invented by Kimitoshi Sato (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor pressure sensor according to the present disclosure includes: a first silicon substrate; a first silicon oxide film provided on the first silicon substrate and forming a closed space together with the first silicon substrate; a second silicon substrate provided on the first silicon oxide film; a gauge resistor provided on a surface layer of a surface of the second silicon substrate opposite to a surface on which t...