ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,714, issued on May 12, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Naoki Ikeda (Tokyo), Kazuki Koda (Tokyo), Shuhei Yokoyama (Tokyo) and Shogo Shibata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a rectangular RC-IGBT; an IC chip electrically connected to the RC-IGBT; a plurality of control terminals electrically connected to the IC chip; a plurality of power terminals electrically connected to the RC-IGBT; and a rectangular sealing resin covering the RC-IGBT and the IC chip. The RC-IGBT has an aspect ratio of 1.62 or more, the sealing resin has a lengthwise lengt...