US Patent Issued to Mitsubishi Electric on March 31 for "Semiconductor device comprising electrode terminals coated with an insulating film having a thickness of less than 100 microns, method of manufacturing the semiconductor device, and power conversion apparatus comprising the semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,720, issued on March 31, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device comprising electrode terminals coated with an insulating film having a thickness of less than 100 microns, method of manufacturing the semiconductor device, and power conversion apparatus comprising the semiconductor device" was invented by Yoshitaka Kimura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a technique that lowers the self-inductance of a semiconductor device. A semiconductor device includes an insulating substrate having a circuit pattern formed on an upper surface thereof, a semiconductor element mounted on...