US Patent Issued to Mitsubishi Electric on March 31 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,483, issued on March 31, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Shigeto Honda (Tokyo), Yusuke Fukada (Tokyo) and Hayato Okamoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "To suppress an increase in RC-IGBT recovery loss. In a semiconductor device, an IGBT region includes a base layer of a second conductivity type in a surface layer of a drift layer, a diode region includes an anode layer of a second conductivity type in the surface layer of the drift layer, a termination region includes a well layer of the second conductivity type in the s...