US Patent Issued to Mitsubishi Electric on March 31 for "IGBT and diode with lifetime control regions" (Japanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,462, issued on March 31, was assigned to Mitsubishi Electric Corp. (Tokyo).

"IGBT and diode with lifetime control regions" was invented by Kosuke Sakaguchi (Tokyo), Takahiro Nakatani (Tokyo), Koichi Nishi (Tokyo) and Shinya Soneda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the disclosure, a semiconductor device includes a semiconductor substrate including an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate and a second electrode provided on a back surface of the semiconductor substrate, wherein the diode region includes an n-type drift layer, a p-type anode layer p...