US Patent Issued to Mitsubishi Electric on March 3 for "Semiconductor device and power conversion apparatus" (Japanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,638, issued on March 3, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and power conversion apparatus" was invented by Kenji Harada (Tokyo) and Shinya Soneda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has an alternating region in which insulated gate bipolar transistor (IGBT) regions and diode regions are alternately arranged linearly in a plan view. In the alternating region, a width, in the first direction, of an IGBT region closest to the center of a cell region is equal to or smaller than widths of other IGBT regions in the first direction, and a width, in the first direction, of a diod...