ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,671, issued on March 3, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Takuichiro Shitomi (Tokyo), Manabu Yoshino (Tokyo) and Toshihiro Imasaka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive field plate is arranged in a spiral shape in plan view so as to gradually approach an inner main electrode from an outer main electrode. The plurality of floating layers are arranged radially toward the low potential region around the high potential region in plan view. The resistive field plate is provided on the plurality of floating layers via an interlayer ins...