US Patent Issued to Mitsubishi Electric on June 2 for "Semiconductor device, method of manufacturing semiconductor device, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,202, issued on June 2, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device, method of manufacturing semiconductor device, and power conversion device" was invented by Yusuke Miyata (Tokyo), Kenji Suzuki (Tokyo), Yuki Haraguchi (Tokyo), Haruhiko Minamitake (Tokyo), Taiki Hoshi (Tokyo) and Hidenori Koketsu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device and a method of manufacturing a semiconductor device in which deterioration of energy loss is suppressed. The semiconductor device includes: a drift layer of a first conductivity type provided between a first main surface and a second main su...