US Patent Issued to Mitsubishi Electric on July 7 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,608, issued on July 7, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Koichiro Nishizawa (Tokyo) and Daisuke Tsunami (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate (1) having a GaN surface (2) is immersed in a catalyst metal solution (4) containing, potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal (5) on the GaN surface (2). A metal film (7) is formed on the GaN surface (2) having the catalyst metal (5) deposited thereon by electroless plating."

The patent was filed on Jan....