US Patent Issued to Mitsubishi Electric on July 21 for "Manufacturing method for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,210, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Manufacturing method for semiconductor device" was invented by Kakeru Otsuka (Tokyo), Hayato Okamoto (Tokyo), Katsumi Nakamura (Tokyo), Koji Tanaka (Tokyo) and Koichi Nishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a drift layer of a first conduction type provided in a semiconductor substrate having a first principal plane and a second principal plane opposed to the first principal plane; a first semiconductor layer of a second conduction type provided between the first principal plane of the semiconductor substrate and the drift ...