US Patent Issued to Mitsubishi Electric on July 14 for "Semiconductor device comprising a transistor region and a capacitance adjusting region" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,792, issued on July 14, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device comprising a transistor region and a capacitance adjusting region" was invented by Shinya Soneda (Tokyo), Kazuya Konishi (Tokyo) and Akihiko Furukawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a capacitance adjusting region. The capacitance adjusting region includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a plurality of control trench gates. The first semiconductor layer is provided as a surface layer at an upper surface of the sem...