US Patent Issued to Mitsubishi Electric on Feb. 17 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,312, issued on Feb. 17, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Ayanori Gatto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first trench provided from the upper surface of a first impurity layer to the inside of a first semiconductor layer, a second trench provided from the upper surface of a second impurity layer to a position lower than the lower surface of the first semiconductor layer; a second semiconductor layer of a first conductivity type provided on the surface layer of the first impurity layer and d...