US Patent Issued to Mitsubishi Electric on Feb. 17 for "Semiconductor device and electric power conversion device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,310, issued on Feb. 17, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and electric power conversion device" was invented by Tatsuo Harada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Peak concentration of the carrier accumulation layer is equal to or higher than 1.0E16/cm3. A bottom part of the trench is positioned inside the n-type carrier accumulation layer. When a concentration ratio is a result of division of a concentration of the carrier accumulation layer by a concentration of the drift layer at a depth of the bottom part of the trench, the depth of the bottom part of the trench is a position at which the c...