US Patent Issued to Mitsubishi Electric on Aug. 25 for "Power semiconductor device, method for manufacturing same, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,162, issued on Aug. 25, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Power semiconductor device, method for manufacturing same, and power conversion device" was invented by Haruna Tada (Tokyo), Masaki Goto (Tokyo), Hodaka Rokubuichi (Tokyo), Hayato Terada (Tokyo) and Yasuyuki Sanda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a power module part and a heat sink. An uneven part is formed in a module base in the power module part. The uneven part includes a recess and a buffer recess. The buffer recess is formed in a direction that crosses a direction in which the recess extends. An uneven part is ...