US Patent Issued to Mitsubishi Electric on April 21 for "Semiconductor device and power conversion apparatus" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,594, issued on April 21, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and power conversion apparatus" was invented by Katsutoshi Sugawara (Tokyo), Yutaka Fukui (Tokyo), Kohei Adachi (Tokyo) and Kazuya Ishibashi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of trenches penetrating through a source region and a base region, and a mesa region as a region between two of the plurality of trenches. A gate electrode that faces the base region with a gate insulating film interposed between the gate electrode and the base region is formed in each trench. An electric field reliev...