US Patent Issued to MITSUBISHI ELECTRIC on April 21 for "Method for measuring degradation of thermal resistance between power semiconductor and heat sink, and control device for power semiconductor" (French Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,607,585, issued on April 21, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Method for measuring degradation of thermal resistance between power semiconductor and heat sink, and control device for power semiconductor" was invented by Julio Brandelero (Rennes Cedex, France) and Pierre-Yves Pichon (Rennes Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for measuring degradation of a thermal resistance between a power semiconductor and a heat sink of a power module assembly where the power semiconductor has an internal gate resistance, including measuring a first initial parameter related to the power semiconductor junction temp...