US Patent Issued to MITSUBISHI CHEMICAL on June 2 for "Method for producing nitride crystal and nitride crystal" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,644,201, issued on June 2, was assigned to MITSUBISHI CHEMICAL Corp. (Tokyo).

"Method for producing nitride crystal and nitride crystal" was invented by Yutaka Mikawa (Ushiku, Japan), Hideo Fujisawa (Ushiku, Japan), Kazunori Kamada (Ushiku, Japan), Hirobumi Nagaoka (Ushiku, Japan), Shinichiro Kawabata (Ushiku, Japan) and Yuji Kagamitani (Ushiku, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diam...