ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,721, issued on Oct. 27, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan).
"Power semiconductor module and power conversion device using the same" was invented by Taiga Arai (Hitachi, Japan), Daisuke Kawase (Hitachi, Japan), Akira Mima (Tokyo) and Katsuaki Saito (Hitachi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a power semiconductor module comprising: a gate terminal to which a control signal is inputted; a reference potential terminal disposed adjacent to the gate terminal with a predetermined interval from the gate terminal; a main circuit wiring disposed in the vicinity of the reference potential te...