US Patent Issued to MINEBEA POWER SEMICONDUCTOR DEVICE on July 28 for "Power semiconductor module" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,695,448, issued on July 28, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan).

"Power semiconductor module" was invented by Taiga Arai (Hitachi, Japan), Katsuaki Saito (Hitachi, Japan), Daisuke Kawase (Hitachi, Japan), Akira Mima (Tokyo) and Takashi Wada (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "To provide a technique enabling stable protection of a switching element at the time of short circuit by suppressing jumping of the voltage Vge between a gate terminal and a reference potential terminal at the time of occurrence of short circuit. A power semiconductor module having at least an upper arm, includes: a Ze...