US Patent Issued to Micron Technology on Sept. 29 for "Memory device to sense memory cells without bitline precharge" (Italian Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,530, issued on Sept. 29, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device to sense memory cells without bitline precharge" was invented by Michele Maria Venturini (Milan) and Umberto di Vincenzo (Capriate San Gervasio, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatus related to memory devices. In one approach, a memory device controls a power supply to a detector that is used to sense a voltage of a bitline coupled to a memory cell. An output of the detector indicates a logic state of the selected memory cell. By controlling a voltage of the power supply, a detection threshold of the detector...