US Patent Issued to Micron Technology on Sept. 22 for "Semiconductor memory device performing refresh operation using multiple delay circuits" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,073, issued on Sept. 22, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor memory device performing refresh operation using multiple delay circuits" was invented by Atsushi Hatakeyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example apparatus includes a plurality of pairs of input and output signal lines, a plurality of first delay circuits operatively connected between the plurality of input signal lines and the plurality of output signal lines, and a first selector circuit configured to connect a selected one of the plurality of first delay circuits between a selected one of the plurality of pairs of the input ...