US Patent Issued to Micron Technology on Sept. 22 for "Differential subthreshold read of memory cell pair in a memory device" (Italian Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,083, issued on Sept. 22, was assigned to Micron Technology Inc. (Boise, Idaho).

"Differential subthreshold read of memory cell pair in a memory device" was invented by Umberto di Vincenzo (Capriate San Gervasio, Italy) and Michele Maria Venturini (Milan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods, and apparatus related to memory devices. In one approach, a differential read operation is performed on a memory cell pair. Bitlines or digit lines are used to select the memory cells. The read operation is performed in a subthreshold mode in which the memory cells of the pair do not threshold (e.g., do not switch or snap). A voltage o...