US Patent Issued to Micron Technology on Sept. 15 for "Interrupting a memory built-in self-test" (Idaho Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,338, issued on Sept. 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Interrupting a memory built-in self-test" was invented by Scott E. Schaefer (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to interrupting a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, that the memory built-in self-test is to be interrupted while the memory built-in self-test is being performed using a test mode. The memory devi...