US Patent Issued to Micron Technology on Sept. 1 for "Wordline ramp rate monitor for early detection of defect activation" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,672, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Wordline ramp rate monitor for early detection of defect activation" was invented by Fulvio Rori (Boise, Idaho), Pitamber Shukla (Boise, Idaho), Chiara Cerafogli (Boise, Idaho) and Erasmo Jose B. Vargas (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A methods and system directed to a wordline ramp rate monitor for early detection of defect activation are disclosed. A memory access directed to a wordline is initiated. Based on an applied ramping voltage, a ramp rate of the wordline is determined. Responsive to determining that the ramp rate satisfied a defec...