US Patent Issued to Micron Technology on Sept. 1 for "Partial block erase operations in memory devices" (Singaporean, Italian Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,662, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Partial block erase operations in memory devices" was invented by Violante Moschiano (Avezzano, Italy), Shyam Sunder Raghunathan (Singapore), Haiou Che (Singapore) and Walter di Francesco (Avezzano, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described are systems and methods for performing partial block erase operations. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: identifyi...