US Patent Issued to Micron Technology on Sept. 1 for "Forming an indium chalcogenide film" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,723,308, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Forming an indium chalcogenide film" was invented by Timothy A. Quick (Boise, Idaho) and Jean-Sebastien Materne Lehn (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for forming an indium chalcogenide film are described. Precursors that include an indium-cyclopentadienyl compound may enable formation of indium chalcogenide films at a lower temperature as compared to other precursors including indium, as the reactivity of indium-cyclopentadienyl compounds may be higher than these other precursors. Additionally, using ammonia as a ...