US Patent Issued to Micron Technology on Oct. 27 for "Select gate transistor with segmented channel fin" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,369, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Select gate transistor with segmented channel fin" was invented by Darwin A. Clampitt (Wilder, Idaho), Albert Fayrushin (Boise, Idaho), Matthew J. King (Boise, Idaho) and Madison D. Drake (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include memory devices designed to provide enhanced gate-induced-drain-leakage (GIDL) current during memory erase operations. The enhanced operation can be provided by enhancing the electric field in the channel structures of select gate transistors to strings of memory cells. The channel structur...