US Patent Issued to Micron Technology on Oct. 27 for "Reducing bit error rate in memory devices" (California, Texas Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,399, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Reducing bit error rate in memory devices" was invented by Tingjun Xie (Milpitas, Calif.), Yang Liu (Melissa, Texas), Jiangli Zhu (San Jose, Calif.), Juane Li (San Jose, Calif.) and Aaron Lee (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example method comprises: identifying, by a processing device, among a plurality of wordlines of a memory device, a first subset of ordinary wordlines and a second subset of mandatory wordlines, wherein a mandatory wordline of the second subset exhibits a first value of a data state metric that exceeds a second val...