US Patent Issued to Micron Technology on Oct. 27 for "Read level adjustment for memory device" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,396, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read level adjustment for memory device" was invented by Che Chen (Boise, Idaho), Gary F. Besinga (Boise, Idaho), Tawalin Opastrakoon (Boise, Idaho) and Michael G. Miller (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for adjusting read levels of a memory device includes detecting, by a drive-adjusted valley track module of a memory controller, a read-intensive workload for the memory device. The method also includes determining, by a drive-adjusted valley track module whether data stored in the memory device related to the read-intensive workload ...