US Patent Issued to Micron Technology on Oct. 20 for "Memory device with laterally formed memory cells" (Italian, American Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,749, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device with laterally formed memory cells" was invented by Thomas M. Graettinger (Boise, Idaho), Lorenzo Fratin (Buccinasco, Italy), Patrick M. Flynn (Boise, Idaho), Enrico Varesi (Milan) and Paolo Fantini (Vimercate, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material s...