ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,267, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor device and method of forming the same" was invented by Yuki Munetaka (Higashihiroshima, Japan) and Tsuyoshi Tomoyama (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a plurality of memory cells in a memory cell array region; a plurality of word lines extending across the memory cell array region and a peripheral region in which no memory cell is arranged; a plurality of contact plugs on even numbered ones of the plurality of word lines in the peripheral region, respectively; and a plurality of insulating walls on o...