US Patent Issued to Micron Technology on Nov. 3 for "Reducing programming disturbance in memory devices" (California Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,846, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Reducing programming disturbance in memory devices" was invented by Aaron Yip (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods are presented, including a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then be applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The s...