US Patent Issued to Micron Technology on Nov. 3 for "Memory device with segmented SGD drain" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,834, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device with segmented SGD drain" was invented by Darwin A. Clampitt (Wilder, Idaho) and Collin Howder (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include memory devices designed to provide enhanced gate-induced-drain-leakage (GIDL) current during memory erase operations. The enhanced operation can be provided by enhancing the electric field in the channel structures of select gate transistors to strings of memory cells at segmented drains of the select gate transistors. The segmented drains can have conductive fins inte...