US Patent Issued to Micron Technology on Nov. 3 for "Memory circuitry and methods used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,288, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and methods used in forming memory circuitry" was invented by Shuangqiang Luo (Boise, Idaho), Indra V. Chary (Boise, Idaho) and Kar Wui Thong (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory circuitry comprising strings of memory cells comprises vertically-alternating insulative tiers and conductive tiers that extend from a memory-array region into a stair-step region across an intermediate region that is between the memory-array region and the stair-step region. The insulative tiers and the conductive tiers comprise memory blocks upper ...